| PART |
Description |
Maker |
| K7N403601B K7N403601B-QC13 K7N403609B-QC20 K7N4018 |
128Kx36 & 256Kx18 Pipelined NtRAMTM
256 Megabit, 3.0 Volt-only Page Mode Flash Memory
128Kx36 & 256Kx18 Pipelined NtRAM 128K × 36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7P401823B |
128Kx36 & 256Kx18 SRAM
|
Samsung semiconductor
|
| KM718V849 KM736V749 |
(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM
|
Samsung Semiconductor
|
| K7N401801M K7N403601M |
128Kx36 & 256Kx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| K7P401811M-HC160 K7P403611M-HC200 K7P403611M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
128K X 36 STANDARD SRAM, 2.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Samsung Electronic
|
| CY7C1353B-66AC CY7C1353B-66BGC CY7C1353B CY7C1353B |
256Kx18 Flow-Through SRAM with NoBL Architecture
|
http://
CYPRESS[Cypress Semiconductor]
|
| K7A401800A |
256Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
Samsung Electronic
|
| KM736V787 |
128Kx36-Bit Synchronous Burst SRAM(128Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM736V789 |
128Kx36-Bit Synchronous Pipelined Burst SRAM(128Kx36位同步流水线脉冲静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CY7C1353-40AC CY7C1353-66AC |
256Kx18 Flow-Through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 14 ns, PQFP100
256Kx18 Flow-Through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 11 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
| HYB39S16320TQ-6 HYB39S16320TQ-7 HYB39S16320TQ-8 |
256k x2 x32 SGRAM
|
Infineon
|
